1 - 2 ? 2000 ixys all rights reserved ultra-low v ce(sat) igbt ixgn 60N60 v ces = 600 v i c25 = 100 a v ce(sat) = 1.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 100 a i c90 t c = 90 c60a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.7 v features international standard package sot-227b aluminium nitride isolation - high power dissipation isolation voltage 3000 v~ very high current, fast switching igbt low v ce(sat) for minimum on-state conduction losses mos gate turn-on drive simplicity low collector-to-case capacitance (< 50 pf) low package inductance (< 5 nh) - easy to drive and to protect applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages easy to mount with 2 screws space savings high power density 97521e (7/00) e g e e c g = gate, c = collector, e = emitter either emitter terminal can be used as main or kelvin emitter sot-227b minibloc preliminary data sheet ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 30 55 s pulse test, t 300 s, duty cycle 2 % c ies 4000 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 290 pf c res 100 pf q g 200 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 35 nc q gc 80 nc t d(on) 50 ns t ri 30 ns t d(off) 300 600 ns t fi 360 570 ns e off 815mj t d(on) 50 ns t ri 30 ns e on 3mj t d(off) 650 ns t fi 550 ns e off 17 mj r thjc 0.50 k/w r thck 0.05 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgn 60N60 m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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